FQA70N10, Транзистор N-MOSFET, полевой, 100В, 49,5А, 214Вт, TO3PN, QFET®
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Описание
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 70 A |
Maximum Drain Source Resistance | 23 mΩ |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Source Voltage | -25 V, +25 V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 214 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-3PN |
Pin Count | 3 |
Series | QFET |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 85 nC @ 10 V |
Width | 5mm |
Вес, г | 6 |
Техническая документация
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