Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Texas Instruments › CSD17577Q5A

CSD17577Q5A

Изображения служат только для ознакомления,
см. техническую документацию

282 ֏

Мин. кол-во для заказа 6 шт.

Добавить в корзину 6 шт. на сумму 1 692 ֏

Номенклатурный номер: 8022968633

Бренд: Texas Instruments

Описание

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	2 ns
Forward Transconductance - Min:	79 S
Id - Continuous Drain Current:	83 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	53 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	27 nC
Rds On - Drain-Source Resistance:	4.2 mOhms
Rise Time:	12 ns
Series:	CSD17577Q5A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	3 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Brand	Texas Instruments
Configuration	Single
Factory Pack Quantity	250
Fall Time	2 ns
Height	1 mm
Id - Continuous Drain Current	60 A
Length	6 mm
Manufacturer	Texas Instruments
Maximum Operating Temperature	+85 C
Minimum Operating Temperature	-40 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	VSONP-8
Packaging	Cut Tape
Pd - Power Dissipation	53 W
Product Category	MOSFET
Qg - Gate Charge	27 nC
Rds On - Drain-Source Resistance	4.8 mOhm
Rise Time	12 ns
RoHS	Details
Series	CSD17577Q5
Technology	Si
Tradename	NexFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	18 ns
Typical Turn-On Delay Time	3 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1.4 V
Width	4.9 mm
Вес, г	0.34