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CSD17579Q5A

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346 ֏

Мин. кол-во для заказа 5 шт.

от 10 шт. — 272 ֏

от 30 шт. — 232 ֏

от 100 шт. — 197 ֏

Добавить в корзину 5 шт. на сумму 1 730 ֏

Номенклатурный номер: 8022982665

Бренд: Texas Instruments

Описание

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Id - Continuous Drain Current:	20 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	VSONP-8
Pd - Power Dissipation:	36 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	15.1 nC
Rds On - Drain-Source Resistance:	11.6 mOhms
Series:	CSD17579Q5A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Brand	Texas Instruments
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	250
Fall Time	1 ns
Forward Transconductance - Min	36 S
Id - Continuous Drain Current	46 A
Manufacturer	Texas Instruments
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	VSON-8
Packaging	Reel
Pd - Power Dissipation	36 W
Product Category	MOSFET
Qg - Gate Charge	5.4 nC
Rds On - Drain-Source Resistance	11.6 mOhms
Rise Time	7 ns
RoHS	Details
Series	CSD17579Q5A
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	13 ns
Typical Turn-On Delay Time	3 ns
Unit Weight	0.000847 oz
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1 V