STP45N65M5
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1 шт. с центрального склада, срок 3 недели
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Альтернативные предложения4
Описание
Электроэлемент
MOSFET, N CH, 650V, 35A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power
Технические параметры
| Brand | STMicroelectronics |
| Factory Pack Quantity | 1000 |
| Id - Continuous Drain Current | 35 A |
| Manufacturer | STMicroelectronics |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 208 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 78 mOhms |
| RoHS | Details |
| Series | MDmesh M5 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Case | TO220-3 |
| Drain current | 22A |
| Drain-source voltage | 650V |
| Features of semiconductor devices | ESD protected gate |
| Gate-source voltage | ±25V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting | THT |
| On-state resistance | 78mΩ |
| Polarisation | unipolar |
| Power dissipation | 210W |
| Type of transistor | N-MOSFET |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 35 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 208 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 82 nC |
| Rds On - Drain-Source Resistance: | 78 mOhms |
| Series: | Mdmesh M5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Resistance | 78 mΩ |
| Maximum Drain Source Voltage | 710 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 210 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 82 nC @ 10 V |
| Width | 4.6mm |
| Вес, г | 2.734 |
Техническая документация
...45N65M5
pdf, 1678 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1662 КБ
Datasheet STP45N65M5
pdf, 1681 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 19 июня1 | бесплатно |
| HayPost | 23 июня1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
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