TC6320TG-G, Сборка из полевых транзисторов, N/P-канальный, 200 В
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Описание
Транзисторы / Полевые транзисторы / Сборки MOSFET транзисторов
Сборка из полевых транзисторов, N/P-канальный, 200 В
Технические параметры
| Корпус | soic8 | |
| Brand: | Microchip Technology | |
| Channel Mode: | Enhancement | |
| Configuration: | Dual | |
| Factory Pack Quantity: Factory Pack Quantity: | 3300 | |
| Fall Time: | 15 ns | |
| Forward Transconductance - Min: | 400 mmho | |
| Id - Continuous Drain Current: | 2 A | |
| Manufacturer: | Microchip | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Moisture Sensitive: | Yes | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 2 Channel | |
| Package / Case: | SOIC-8 | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Product: | MOSFET Small Signal | |
| Rds On - Drain-Source Resistance: | 8 Ohms, 7 Ohms | |
| Rise Time: | 15 ns | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel, P-Channel | |
| Transistor Type: | 1 N-Channel, 1 P-Channel | |
| Vds - Drain-Source Breakdown Voltage: | 200 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1 V | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | N|P | |
| Configuration | Dual Dual Drain | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant | |
| Lead Shape | Gull-wing | |
| Material | Si | |
| Maximum Drain Source Resistance (mOhm) | 7000@10V@N Channel|8000@10V@P Channel | |
| Maximum Drain Source Voltage (V) | 200 | |
| Maximum Gate Threshold Voltage (V) | 2 | |
| Maximum IDSS (uA) | 10 | |
| Maximum Operating Temperature (°C) | 150 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 2 | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| PCB changed | 8 | |
| Pin Count | 8 | |
| PPAP | No | |
| Product Category | Power MOSFET | |
| Standard Package Name | SO | |
| Supplier Package | SOIC N | |
| Typical Fall Time (ns) | 15 | |
| Typical Input Capacitance @ Vds (pF) | 110(Max)@25V@N Channel|200(Max)@25V@P Channel | |
| Typical Rise Time (ns) | 15 | |
| Typical Turn-Off Delay Time (ns) | 20 | |
| Typical Turn-On Delay Time (ns) | 10 | |
| Maximum Drain Source Resistance - (mOhm) | 7000@10V@N ChannelI8000@10V@P Channel | |
| Maximum Drain Source Voltage - (V) | 200 | |
| Maximum Gate Threshold Voltage - (V) | 2 | |
| Military | No | |
| Operating Temperature - (??C) | -55~150 | |
| Typical Input Capacitance @ Vds - (pF) | 110(Max)@25V@N ChannelI200(Max)@25V@P Channel | |
| Вес, г | 0.545 |
