VP0104N3-G, Транзистор P-МОП, -40В, -500мА, 1Вт, TO92
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Описание
Описание Транзистор P-МОП, -40В, -500мА, 1Вт, TO92
Технические параметры
Brand: | Microchip Technology |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 4 ns |
Forward Transconductance - Min: | 150 mS |
Id - Continuous Drain Current: | 250 mA |
Manufacturer: | Microchip |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-92-3 |
Packaging: | Bulk |
Pd - Power Dissipation: | 1 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Rds On - Drain-Source Resistance: | 8 Ohms |
Rise Time: | 3 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Type: | FET |
Typical Turn-Off Delay Time: | 8 ns |
Typical Turn-On Delay Time: | 4 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Channel Type | P |
Maximum Drain Source Voltage | 40 V |
Mounting Type | Through Hole |
Package Type | TO-92 |
Вес, г | 0.23 |