CSD18543Q3AT, Транзистор N-MOSFET, полевой, 60В, 35А, 66Вт, VSONP8 3,3x3,3мм
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 520 ֏
от 5 шт. —
1 270 ֏
Добавить в корзину 1 шт.
на сумму 1 520 ֏
Описание
Описание Транзистор N-MOSFET, полевой, 60В, 35А, 66Вт, VSONP8 3,3x3,3мм
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 40 S |
| Id - Continuous Drain Current: | 12 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 66 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11.1 nC |
| Rds On - Drain-Source Resistance: | 12 mOhms |
| Rise Time: | 18 ns |
| Series: | CSD18543Q3A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 8 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Continuous Drain Current (Id) | 12A;60A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 15.6mΩ@4.5V, 12A |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.7V@250uA |
| Input Capacitance (Ciss@Vds) | 1.15nF@30V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 66W |
| Total Gate Charge (Qg@Vgs) | 14.5nC@10V |
| Type | N Channel |
| Вес, г | 0.17 |
Техническая документация
Texas Instruments CSD18543Q3AT
pdf, 403 КБ
