TP2435N8-G, P-Channel Enhancement-Mode Vertical DMOS FET - -350V - 15 ohm - 3-lead SOT-89 - Tape&Reel - RoHS compliant

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Номенклатурный номер: 8031733199

Discrete Semiconductors\Fet Transistors\Mosfet

P-Channel Enhancement-Mode Vertical DMOS FET - -350V - 15 ohm - 3-lead SOT-89 - Tape&Reel - RoHS compliant

Channel Mode	Enhancement
Continuous Drain Current	0.231(A)
Drain-Source On-Volt	350(V)
Gate-Source Voltage (Max)	'±20(V)
Mounting	Surface Mount
Number of Elements	1
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Package Type	SOT-89
Packaging	Tape and Reel
Pin Count	3+Tab
Polarity	P
Power Dissipation	1.6(W)
Rad Hardened	No
Type	Power MOSFET
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	2000
Fall Time:	20 ns
Id - Continuous Drain Current:	231 mA
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-89-3
Pd - Power Dissipation:	1.6 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signals
Rds On - Drain-Source Resistance:	15 Ohms
Rise Time:	20 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Type:	FET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	15 ns
Vds - Drain-Source Breakdown Voltage:	350 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V