CSD16413Q5A, транзистор 8SON
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Описание
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Texas Instruments NexFET™ Power MOSFETThe Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
Технические параметры
| Структура | N-канал | |
| Максимальное напряжение сток-исток Uси,В | 25 | |
| Максимальный ток сток-исток при 25 С Iси макс..А | 24 | |
| Максимальная рассеиваемая мощность Pси макс..Вт | 3.1 | |
| Корпус | SON8-5x6 | |
| Крутизна характеристики S,А/В | 95 | |
| Максимальное пороговое напряжение затвор-исток Uзи макс.,В | 1.6 | |
| Сопротивление канала в открытом состоянии Rси вкл.,мОм | 5.6 | |
| Температура, С | -55…+150 | |
| Brand: | Texas Instruments | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
| Fall Time: | 5.7 ns | |
| Forward Transconductance - Min: | 95 S | |
| Id - Continuous Drain Current: | 100 A | |
| Manufacturer: | Texas Instruments | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | VSONP-8 | |
| Pd - Power Dissipation: | 3.1 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 9 nC | |
| Rds On - Drain-Source Resistance: | 4.1 mOhms | |
| Rise Time: | 15.9 ns | |
| Series: | CSD16413Q5A | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | NexFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 10.7 ns | |
| Typical Turn-On Delay Time: | 9.1 ns | |
| Vds - Drain-Source Breakdown Voltage: | 25 V | |
| Vgs - Gate-Source Voltage: | -16 V, +16 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V | |
| Вес, г | 0.1 |
