FDD6637, Transistor P-MOSFET 30V 80A [DPAK / TO-252]

FDD6637, Transistor P-MOSFET 30V 80A [DPAK / TO-252]
Images are for reference only,
see technical documentation
5445 pcs. from the central warehouse, term 5-7 working days
540 ֏
330 ֏
from 50 pcs.308 ֏
Add to Shopping Cart 1 pcs. amount of 330 ֏
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SKU: 9001002896
Brand / Manufacturer: Vbsemi Electronics Co., Ltd.

Technical parameters

Structure p-channel
Maximum drain-source voltage Usi, V 30
Maximum drain-source current at 25 C Isi max..A 80
Maximum gate-source voltage Uzi max., V 20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.011 Ohm / 30A, 10V
Maximum power dissipation Psi max..W 187
Slope of characteristic, S 20
Housing DPAK(2 Leads+Tab)
Weight, g 0.4

Technical documentation

Datasheet FDD6637
pdf, 764 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP 9 October1 free
HayPost 12 October1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg