FDD6637, Transistor P-MOSFET 30V 80A [DPAK / TO-252]
![FDD6637, Transistor P-MOSFET 30V 80A [DPAK / TO-252]](https://static.chipdip.ru/lib/294/DOC005294472.jpg)
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see technical documentation
see technical documentation
5445 pcs. from the central warehouse, term 5-7 working days
540 ֏
330 ֏
from 50 pcs. —
308 ֏
Add to Shopping Cart 1 pcs.
amount of 330 ֏
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Technical parameters
| Structure | p-channel | |
| Maximum drain-source voltage Usi, V | 30 | |
| Maximum drain-source current at 25 C Isi max..A | 80 | |
| Maximum gate-source voltage Uzi max., V | 20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.011 Ohm / 30A, 10V | |
| Maximum power dissipation Psi max..W | 187 | |
| Slope of characteristic, S | 20 | |
| Housing | DPAK(2 Leads+Tab) | |
| Weight, g | 0.4 | |
Technical documentation
Datasheet FDD6637
pdf, 764 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 9 October1 | free |
| HayPost | 12 October1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
