Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › ON Semiconductor › NTJD5121NT1G, Транзистор MOSFET 2N-канала 60В ...

NTJD5121NT1G, Транзистор MOSFET 2N-канала 60В 295мА SOT-363

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Номенклатурный номер: 9000879280

Бренд: ON Semiconductor***

Описание

DUAL N CHANNEL MOSFET, 60V, SC-88; Channel Type:N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:60V; Continuous Drain Current Id N Channel:304mA; Continuous Drain 08R3934

Технические параметры

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Dual
ECCN (US)	EAR99
EU RoHS	Compliant
Maximum Continuous Drain Current (A)	0.295
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	1600 10V
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.5
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	266
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	2
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	6
Pin Count	6
PPAP	No
Product Category	Power MOSFET
Standard Package Name	SC
Supplier Package	SC-88
Typical Fall Time (ns)	32
Typical Gate Charge @ Vgs (nC)	0.9 4.5V
Typical Input Capacitance @ Vds (pF)	26 20V
Typical Rise Time (ns)	34
Typical Turn-Off Delay Time (ns)	34
Typical Turn-On Delay Time (ns)	22
Вес, г	0.1