FCPF11N60
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см. техническую документацию
3 200 ֏
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2 670 ֏
от 5 шт. —
2 350 ֏
от 10 шт. —
2 180 ֏
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Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 650В, 11А, 36Вт, TO220FP Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand | ON Semiconductor/Fairchild |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 50 |
Fall Time | 56 ns |
Forward Transconductance - Min | 9.7 S |
Height | 16.3 mm |
Id - Continuous Drain Current | 11 A |
Length | 10.67 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-220-3 |
Packaging | Tube |
Pd - Power Dissipation | 36 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 380 mOhms |
Rise Time | 98 ns |
RoHS | Details |
Series | FCPF11N60 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 119 ns |
Typical Turn-On Delay Time | 34 ns |
Unit Weight | 0.080072 oz |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 4.7 mm |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 56 ns |
Forward Transconductance - Min: | 9.7 S |
Id - Continuous Drain Current: | 11 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 36 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 40 nC |
Rds On - Drain-Source Resistance: | 380 mOhms |
Rise Time: | 98 ns |
Series: | FCPF11N60 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 119 ns |
Typical Turn-On Delay Time: | 34 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Case | TO220FP |
Drain current | 11A |
Drain-source voltage | 650V |
Gate charge | 52nC |
Gate-source voltage | ±30V |
Kind of channel | enhanced |
Kind of package | tube |
Mounting | THT |
On-state resistance | 0.38Ω |
Polarisation | unipolar |
Power dissipation | 36W |
Type of transistor | N-MOSFET |
Вес, г | 2.105 |
Техническая документация
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