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FDB0105N407L

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11 700 ֏

Добавить в корзину 1 шт. на сумму 11 700 ֏

Номенклатурный номер: 8003343778

Бренд: ON Semiconductor***

Описание

Электроэлемент

Технические параметры

Current - Continuous Drain (Id) @ 25В°C	460A(Tc)
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	291nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	23100pF @ 20V
Manufacturer	ON Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-263-7, DВІPak(6 Leads+Tab)
Packaging	Tape & Reel(TR)
Part Status	Active
Power Dissipation (Max)	3.8W(Ta), 300W(Tc)
Rds On (Max) @ Id, Vgs	0.8mOhm @ 50A, 10V
Series	PowerTrenchВ®
Supplier Device Package	TO-263-7
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Quint Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Continuous Drain Current (A)	460
Maximum Drain Source Resistance (mOhm)	0.8@10V
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	300000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
PCB changed	6
Pin Count	7
PPAP	No
Process Technology	TMOS
Product Category	Power MOSFET
Standard Package Name	TO-263
Supplier Package	D2PAK
Tab	Tab
Typical Fall Time (ns)	61
Typical Gate Charge @ 10V (nC)	208
Typical Gate Charge @ Vgs (nC)	208@10V
Typical Input Capacitance @ Vds (pF)	16500@20V
Typical Rise Time (ns)	69
Typical Turn-Off Delay Time (ns)	117
Typical Turn-On Delay Time (ns)	45
Вес, г	1