Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › ON Semiconductor › ECH8690-TL-H

ECH8690-TL-H

Изображения служат только для ознакомления,
см. техническую документацию

2 100 ֏

от 2 шт. — 1 710 ֏

от 5 шт. — 1 420 ֏

от 10 шт. — 1 310 ֏

Добавить в корзину 1 шт. на сумму 2 100 ֏

Номенклатурный номер: 8009663025

Бренд: ON Semiconductor***

Описание

Электроэлемент

MOSFET, N & P-CH, 60V, 4.7A, ECH-8; Transistor Polarity:N and P Complement; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:1.5W; Transistor Case Style:ECH; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

Технические параметры

Channel Mode	Enhancement
Drain-Source On-Volt	60(V)
Gate-Source Voltage (Max)	'±20(V)
Mounting	Surface Mount
Number of Elements	2
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Package Type	SOT-28FL
Packaging	Tape and Reel
Pin Count	8
Polarity	N/P
Power Dissipation	1.8(W)
Rad Hardened	No
Type	Power MOSFET
Continuous Drain Current (Id)	4.7A;3.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)	55mΩ@2A, 10V
Drain Source Voltage (Vdss)	60V
Input Capacitance (Ciss@Vds)	955pF@20V
Power Dissipation (Pd)	1.5W
Total Gate Charge (Qg@Vgs)	18nC@10V
Brand:	onsemi
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity:	3000
Id - Continuous Drain Current:	4.7 A, 3.5 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	ECH-8
Pd - Power Dissipation:	1.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	18 nC
Rds On - Drain-Source Resistance:	55 mOhms, 94 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel, P-Channel
Transistor Type:	1 N-Channel, 1 P-Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Вес, г	0.454