NVTR4503NT1G, Транзистор: N-MOSFET, полевой, 30В, 1,5А, 0,73Вт, SOT23, Транзистор
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
92 ֏
Добавить в корзину 1 шт.
на сумму 92 ֏
Описание
Описание Транзистор: N-MOSFET, полевой, 30В, 1,5А, 0,73Вт, SOT23 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 2 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 2 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Drain Source Resistance (mOhm) | 110 10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 300 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 730 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.73 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 10 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | Yes |
| Product Category | Power MOSFET |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Supplier Temperature Grade | Automotive |
| Typical Diode Forward Voltage (V) | 0.85 |
| Typical Fall Time (ns) | 1.6|1.8 |
| Typical Gate Charge @ 10V (nC) | 3.6 |
| Typical Gate Charge @ Vgs (nC) | 3.6 10V|1.9 4.5V |
| Typical Gate Plateau Voltage (V) | 2.8 |
| Typical Gate Threshold Voltage (V) | 1.75 |
| Typical Gate to Drain Charge (nC) | 0.9 |
| Typical Gate to Source Charge (nC) | 0.6 |
| Typical Input Capacitance @ Vds (pF) | 135 15V|130 24V |
| Typical Output Capacitance (pF) | 52 |
| Typical Reverse Recovery Charge (nC) | 4 |
| Typical Reverse Recovery Time (ns) | 9.2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 15 15V |
| Typical Rise Time (ns) | 5.8|6.7 |
| Typical Turn-Off Delay Time (ns) | 14|13.6 |
| Typical Turn-On Delay Time (ns) | 5.8|4.8 |
| Вес, г | 0.1 |
Техническая документация
Похожие товары
![100N03A, Транзистор N-MOSFET 30В 90А [TO-252]](https://static.chipdip.ru/lib/294/DOC005294471.jpg)
