Field effect transistors (FETs, MOSFETs) UMW

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Maximum drain-source voltage Usi, V
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Maximum drain-source current at 25 C Isi max..A
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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Maximum power dissipation Psi max..W
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Slope of characteristic, S
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100N03A, N-MOSFET Transistor 30V 90A [TO-252.]
9 days, 9205 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 90
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.8 mOhm/30A, 10V
Maximum power dissipation Psi max..W: 105
Housing: dpak
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9 days,
9205 pcs.
87 ֏ ×
from 50 pcs. — 77 ֏
10N65F, 650V 10A N-MOSFET Transistor [TO-220F.]
9 days, 1700 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.75 Ohm / 5A, 10V
Housing: TO-220F
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9 days,
1700 pcs.
210 ֏ ×
from 50 pcs. — 183 ֏
12N10, Transistor N-MOSFET 100V 15A [TO-252]
9 days, 1379 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 15
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 114 mOhm/3A, 10V
Maximum power dissipation Psi max..W: 96
Slope of characteristic, S: 35
Housing: dpak
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9 days,
1379 pcs.
73 ֏ ×
from 100 pcs. — 62 ֏
15N10, N-MOSFET Transistor 100V 15A [TO-252.]
9 days, 2482 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 15
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 95 mOhm/10A, 10V
Maximum power dissipation Psi max..W: 55
Slope of characteristic, S: 2
Housing: dpak
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9 days,
2482 pcs.
86 ֏ ×
from 50 pcs. — 74 ֏
1N60G, Transistor N-MOSFET 600V 1A [SOT-223]
9 days, 4590 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Slope of characteristic, S: 0.5
Housing: SOT-223
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9 days,
4590 pcs.
46 ֏ ×
from 50 pcs. — 40 ֏
1N60L, 600V 1A N-MOSFET Transistor [TO-252.]
9 days, 1560 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Slope of characteristic, S: 0.5
Housing: dpak
quick view
9 days,
1560 pcs.
60 ֏ ×
from 50 pcs. — 52 ֏
1N65G, Transistor N-MOSFET 650V 1A [SOT-223]
9 days, 2066 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Slope of characteristic, S: 0.5
Housing: SOT-223
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9 days,
2066 pcs.
55 ֏ ×
from 50 pcs. — 49 ֏
1N65L, 650V 1A N-MOSFET Transistor [TO-252.]
9 days, 666 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Slope of characteristic, S: 0.5
Housing: dpak
quick view
9 days,
666 pcs.
59 ֏ ×
from 50 pcs. — 51 ֏
20N06, N-MOSFET Transistor 60V 20A [TO-252.]
9 days, 6847 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/15A, 10V
Maximum power dissipation Psi max..W: 55
Housing: dpak
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9 days,
6847 pcs.
69 ֏ ×
from 50 pcs. — 59 ֏
25N06, N-MOSFET Transistor 60V 25A [TO-252.]
9 days, 2888 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 25
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/19A, 10V
Maximum power dissipation Psi max..W: 36.2
Housing: dpak
quick view
9 days,
2888 pcs.
82 ֏ ×
from 50 pcs. — 72 ֏
2N60G, N-MOSFET 600V 2A Transistor [SOT-223.]
9 days, 3412 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.2 ohm/1A, 10V
Slope of characteristic, S: 1.5
Housing: SOT-223
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9 days,
3412 pcs.
60 ֏ ×
from 50 pcs. — 52 ֏
2N60L, N-MOSFET Transistor 600V 2A 8W [TO-252.]
9 days, 4693 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.2 ohm/1A, 10V
Slope of characteristic, S: 1.5
Housing: dpak
quick view
9 days,
4693 pcs.
64 ֏ ×
from 50 pcs. — 56 ֏
2N65G, 650V 2A N-MOSFET Transistor [SOT-223.]
9 days, 3333 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.5 ohm/1A, 10V
Slope of characteristic, S: 1.5
Housing: SOT-223
quick view
9 days,
3333 pcs.
56 ֏ ×
from 50 pcs. — 49 ֏
2N65L, 650V 2A N-MOSFET Transistor [TO-252.]
9 days, 934 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.5 ohm/1A, 10V
Slope of characteristic, S: 1.5
Housing: dpak
quick view
9 days,
934 pcs.
69 ֏ ×
from 50 pcs. — 61 ֏
2N7002, N-MOSFET Transistor 60V 115mA [SOT-23-3.]
9 days, 12608 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.115
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohms/0.1A, 10V
Maximum power dissipation Psi max..W: 0.225
Housing: SOT-23-3
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9 days,
12608 pcs.
11 ֏ ×
from 100 pcs. — 8 ֏
2N7002B, N-MOSFET Transistor 60V 115mA [SOT-23-3.]
9 days, 7619 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.115
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.225
Housing: SOT-23-3
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9 days,
7619 pcs.
9 ֏ ×
from 100 pcs. — 7 ֏
30N03A, Transistor N-MOSFET 30V 90A [TO-252]
9 days, 1927 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 90
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.9 mOhm/15A, 10V
Maximum power dissipation Psi max..W: 105
Housing: dpak
quick view
9 days,
1927 pcs.
77 ֏ ×
from 100 pcs. — 66 ֏
30N06, Transistor N-MOSFET 60V 30A [TO-252]
9 days, 2880 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 30
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/15A, 10V
Maximum power dissipation Psi max..W: 55
Housing: dpak
quick view
9 days,
2880 pcs.
74 ֏ ×
from 50 pcs. — 65 ֏
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9 days,
4856 pcs.
54 ֏ ×
from 100 pcs. — 45 ֏
35N06, Transistor N-MOSFET 60V 35A [TO-252]
9 days, 1247 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 35
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/19A, 10V
Maximum power dissipation Psi max..W: 36.2
Housing: dpak
quick view
9 days,
1247 pcs.
103 ֏ ×
from 50 pcs. — 91 ֏
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